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? semiconductor components industries, llc, 2009 december, 2009 ? rev. 2 1 publication order number: ncs2211/d ncs2211 low distortion audio power amplifier with differential output and shutdown mode product description the ncs2211 is a high performance, low distortion class a/b audio amplifier. it is capable of delivering 1 w of output power into an 8 speaker bridge ? tied load (btl). the ncs2211 will operate over a wide temperature range, and it is specified for single ? supply voltage operation for portable applications. it features low distortion performance, 0.2% typical thd + n @ 1 w and incorporates a shutdown/enable feature to extend battery life. the shutdown/enable feature will reduce the quiescent current to 1 a maximum. the ncs2211 is designed to operate over the ? 40 c to +85 c temperature range, and is available in an 8 ? lead soic package and a 3 x 3 mm dfn8 package. the soic package is pin compatible with equivalent function and comparable performance to competitive devices as is the dfn8 package. the dfn8 has a low thermal resistance of only 70 c/w plus has an exposed metal pad to facilitate heat conduction to copper pcb material. low distortion, high power, low quiescent current, and small packaging makes the ncs2211 suitable for applications including notebook and desktop computers, pda?s, and speaker phones. features ? differential output ? 1.0 w into an 8 speaker ? 1.5 w into a 4 speaker ? single supply operation: 2.7 v to 5.5 v ? thd+n: 0.2% @ 1 w output ? low quiescent current: 20 ma max ? shutdown current < 1.0 a ? excellent power supply rejection ? two package options: soic ? 8 package and dfn8 ? pin compatible with competitive devices ? these are pb ? free devices applications ? desktop computers ? notebook computers ? pda?s ? speaker phones ? games marking diagrams http://onsemi.com (note: microdot may be in either location) see detailed ordering and shipping information in the package dimensions sect ion on page 9 of this data sheet. ordering information soic ? 8 d suffix case 751 1 8 n2211 alyw 1 8 pin assignment 1 n2211 = specific device code a = assembly location l = wafer lot y = year w = work week = pb ? free package name pin description enable enable (low)/shutdown (high) 2 bias bias output at (v cc ? v ee )/2; bypass with capacitor to reduce noise 3 in+ non ? inverting input 4in ? inverting input 5 out+ output+ 6 v cc positive supply (bypass with 10 f in parallel with 0.1 f) 7 v ee negative supply (connect to gnd for single ? supply operation) 8 out ? output ? dfn8 mn suffix case 506bj n2211 alyw 18 1
ncs2211 http://onsemi.com 2 pin connections for soic ? 8 and dfn8 1 8 2 3 4 7 6 5 (top view) enable bias in+ in ? out ? v ee v cc out+ figure 1. block diagram output (+) bias ( ? ) input output ( ? ) enable ? + ? + r2 r r r r r1 c1 c2 6 5 8 4 v ee 1 7 2 v cc 3 filtering (+) input r l high low enable (note 1) shutdown enabled 1. enable (pin 1) must be actively driven for proper operation and cannot be left floating. see enable/shutdown control in the specification table for proper logic threshold levels. maximum ratings parameter symbol rating unit power supply voltages v cc 5.5 vdc output current i o 500 ma maximum junction temperature (note 2) t j 150 c operating ambient temperature t a ? 40 to +85 c storage temperature range t stg ? 60 to +150 c power dissipation p d (see graph) mw thermal resistance, junction ? to ? air ? soic ? 8 thermal resistance, junction ? to ? air ? dfn8 (note 4) ja 117 70 c/w moisture sensitivity (note 3) level 1 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 2. power dissipation must be considered to ensure maximum junction temperature (t j ) is not exceeded. 3. for additional information, see application note and8003/d 4. as mounted on an 80x80x1.5 mm fr4 pcb with 650 mm 2 and 2 oz (0.034 mm) thick copper heat spreader. following jedec jesd/eia 51.1, 51.2, 51.3 test guidelines.
ncs2211 http://onsemi.com 3 dc electrical characteristics (v cc = + 5 v, a vd = 2, r l = 8 , c2 = 0.1 f, t a = 25 c, unless otherwise specified) symbol characteristics conditions min typ max unit power supply v cc operating voltage range 2.7 5.5 v i s, on power supply current ? enabled v cc = 2.7 v to 5.5 v t a = ? 40 c to +85 c (note 5) 20 ma i s, off power supply current ? shutdown v cc = 2.7 v to 5.5 v 1.0 a psrr power supply rejection ratio v cc = 2.7 v to 5.5 v t a = ? 40 c to +85 c 75 db enable/shutdown control v ih enable input high device shutdown v cc = 2.7 v to 5.5 v 90% x v cc v cc v v il enable input low device enabled v cc = 2.7 v to 5.5 v gnd 10% x v cc v output characteristics v oh output high voltage from either output to gnd r l = 8 v cc ? 0.400 v v ol output low voltage from either output to gnd r l = 8 0.400 v v out ? off differential output offset voltage v cc = 2.7 v to 5.5 v (note 5) t a = ? 40 c to +85 c 50 mv i o output current output to output 350 ma ac electrical characteristics (v cc = + 5 v, a vd = 2, r l = 8 , c2 = 0.1 f, t a = 25 c, unless otherwise specified) symbol characteristics conditions min typ max unit frequency domain performance gbw gain bandwidth product 12 mhz phase margin a vd = +2, r l = 8 , v cc = 5 v 80 thd+n total harmonic distortion v cc = 5 v, f = 1 khz, p = 1.0 w into 8 v cc = 5 v, f = 1 khz, p = 0.5 w into 8 v cc = 3.3 v, f = 1 khz, p = 0.35 w into 8 v cc = 2.7 v, f = 1 khz, p = 0.25 w into 8 0.2 0.15 0.1 0.1 % time domain response t on turn on delay v cc = 5 v 1 s t off turn off delay v cc = 5 v 4 s 5. guaranteed by design and/or characterization.
ncs2211 http://onsemi.com 4 typical performance characteristics t a = 25 c v cc = 5.0 v a vd = 20 (btl) r l = 8 t a = 25 c v cc = 5.0 v a vd = 2 (btl) r l = 8 figure 2. thd + n vs. frequency (p l = 500 mw) figure 3. thd + n vs. frequency (p l = 1 w) frequency (hz) 10 k 1 k 100 20 0.01 0.1 1 figure 4. thd + n vs. frequency (p l = 500 mw) figure 5. thd + n vs. frequency (p l = 1 w) figure 6. thd + n vs. frequency (p l = 500 mw) figure 7. thd + n vs. frequency (p l = 1 w) thd + n (%) c2 = 0.1 f c2 = 1.0 f frequency (hz) 10 k 1 k 100 20 0.1 1 10 thd + n (%) c2 = 0.1 f c2 = 1.0 f frequency (hz) 10 k 1 k 100 20 0.1 1 10 thd + n (%) c2 = 0.1 f c2 = 1.0 f frequency (hz) 10 k 1 k 100 20 0.01 0.1 1 thd + n (%) c2 = 0.1 f c2 = 1.0 f frequency (hz) 10 k 1 k 100 20 0.1 1 10 thd + n (%) c2 = 0.1 f c2 = 1.0 f frequency (hz) 10 k 1 k 100 20 0.1 1 10 thd + n (%) c2 = 0.1 f c2 = 1.0 f t a = 25 c v cc = 5.0 v a vd = 2 (btl) r l = 8 t a = 25 c v cc = 5.0 v a vd = 10 (btl) r l = 8 t a = 25 c v cc = 5.0 v a vd = 20 (btl) r l = 8 t a = 25 c v cc = 5.0 v a vd = 10 (btl) r l = 8
ncs2211 http://onsemi.com 5 typical performance characteristics figure 8. thd + n vs. frequency (p l = 350 mw) figure 9. thd + n vs. frequency (p l = 250 mw) frequency (hz) 10 k 1 k 100 20 0.01 0.1 1 figure 10. thd + n vs. frequency (p l = 350 mw) figure 11. thd + n vs. frequency (p l = 250 mw) figure 12. thd + n vs. frequency (p l = 350 mw) figure 13. thd + n vs. frequency (p l = 250 mw) thd + n (%) c2 = 0.1 f c2 = 1.0 f frequency (hz) 10 k 1 k 100 20 0.01 1 10 thd + n (%) c2 = 0.1 f c2 = 1.0 f frequency (hz) 10 k 1 k 100 20 0.1 1 10 thd + n (%) c2 = 0.1 f c2 = 1.0 f frequency (hz) 10 k 1 k 100 20 0.01 0.1 1 thd + n (%) c2 = 0.1 f c2 = 1.0 f frequency (hz) 10 k 1 k 100 20 0.01 1 10 thd + n (%) c2 = 0.1 f c2 = 1.0 f frequency (hz) 10 k 1 k 100 20 0.01 1 10 thd + n (%) c2 = 0.1 f c2 = 1.0 f t a = 25 c v cc = 3.3 v a vd = 2 (btl) r l = 8 t a = 25 c v cc = 3.3 v a vd = 10 (btl) r l = 8 t a = 25 c v cc = 3.3 v a vd = 20 (btl) r l = 8 t a = 25 c v cc = 2.7 v a vd = 2 (btl) r l = 8 t a = 25 c v cc = 2.7 v a vd = 10 (btl) r l = 8 t a = 25 c v cc = 2.7 v a vd = 20 (btl) r l = 8 0.1 0.1 0.1 0.1
ncs2211 http://onsemi.com 6 typical performance characteristics soic ? 8 ? 150 mm 2 8 lead dfn ? 50 mm 2 soic ? 8 ? 50 mm 2 8 lead dfn ? 650 mm 2 8 lead dfn ? 150 mm 2 soic ? 8 ? 650 mm 2 v cc = 5.0 v v cc = 2.7 v v cc = 3.3 v r l = 8 v cc = 5.0 v v cc = 2.7 v v cc = 3.3 v r l = 4 figure 14. thd + n vs. p output (frequency = 20 hz) figure 15. soa curve with pcb copper thickness 2 oz and various areas p output (w) 10 1 0.1 0.01 0.001 0.0001 0.01 1 10 100 figure 16. thd + n vs. p output (frequency = 1 khz) figure 17. p out vs. load resistance t ? ambient ( c) 150 125 100 75 50 25 0 0.25 0.50 0.75 1.00 1.25 1.50 figure 18. thd + n vs. p output (frequency = 20 khz) figure 19. power dissipation vs. output power output power (w) 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 thd + n (%) steady state power (w) internal power dissipation (w) 2.0 0.1 v cc = 5 v t a = 25 c c2 = 0.1 f a vd = 2 (btl) r l = 8 v cc = 5.0 v v cc = 2.7 v v cc = 3.3 v p output (w) 10 1 0.1 0.01 0.001 0.0001 0.01 1 10 100 thd + n (%) 0.1 t a = 25 c c2 = 0.1 f a vd = 2 (btl) r l = 8 v cc = 5.0 v v cc = 2.7 v v cc = 3.3 v p output (w) 10 1 0.1 0.01 0.001 0.0001 0.01 1 10 100 thd + n (%) 0.1 t a = 25 c c2 = 0.1 f a vd = 2 (btl) r l = 8 load resistance ( ) 48 32 28 16 8 4 0 0.2 0.4 0.6 0.8 1.0 2.0 p out (w) 12 24 20 44 40 36 1.2 1.4 1.6 1.8 1.4
ncs2211 http://onsemi.com 7 typical performance characteristics figure 20. turn ? on time figure 21. turn ? off time figure 22. gain and phase shift vs. frequency frequency (hz) 100 m 10 m 1 m 100 k 10 k 1 k 10 ? 20 0 20 40 60 100 gain (db) 80 100 phase shift (degrees) 180 135 90 45 0 ? 45 ? 90 channel 1: enable logic and out+ and out ? channel 2: differential output time base: 1 sec per division channel 1: shutdown logic and out+ and out ? channel 2: differential output time base: 5 sec per division
ncs2211 http://onsemi.com 8 typical performance characteristics figure 23. power ? supply rejection frequency of power ? supply ripple (hz) v cc = 5 v r l = 8 rf = rg = 20 k avd = 1 cbypass = 10 f ?? 0.1 f c2 = 0.1 f ripple = 200 mv p ? p 10 100 1 k 10 k (db) ? 120 ? 11 0 ? 100 ? 90 ? 80 ? 70 ? 60 ? 50 ? 40 ? 30 ? 20 ? 10 +0
ncs2211 http://onsemi.com 9 applications information the ncs2211 is unity gain stable and therefore does not require any compensation, but a proper power ? supply bypass is requ ired as shown in figure 24. performance will be enhanced by adding a filter capacitor (c2) to the mid ? supply node (pin 2). see typical performance characteristics for details. it is preferable to ac couple the input to avoid a large dc output offset. both outputs can be driven to within 400 mv of either supply rail with an 8 load. typical application of the device: 6 output ( ? ) vcc bias ( ? ) input output (+) enable ? + ? + r2 20k r1 20k c1 c2 0.1 f figure 24. +5 v 10 f ?? 0.1 f c3 0.1 f 2 v pp 5 8 1 7 v ee 2 4 3 filtering (+) input r l thermal considerations care must be taken to not exceed the maximum junction temperature of the device (150 c). figure 15 shows the tradeoff between output power and junction temperature for different areas of exposed pcb copper (2 oz). if the maximum power is exceeded momentarily, normal circuit operation will be restored as soon as the die temperature is reduced. leaving the device in an ?overheated? condition for an extended period can result in device burnout. to ensure proper operation, it is important to observe the soa curves. gain since the output is differential, the gain from input to the speaker is: a vd = 2 x r2/r1. for low level input signals, thd will be optimized by pre ? amplifying the signal and running the ncs2211 at gain a vd = 2 and c2=1 f. bias filtering even though the ncs2211 will operate nominally with no filter capacitor on pin 2, thd performance will be improved dramatically with a filter capacitor installed (see typical performance characteristics). in addition a c2 filter capacitor at pin 2 will suppress start ? up popping noise. to insure optimal suppression the time constant of the bias filtering needs to be greater than the time constant of the input capacitive coupling circuit, that is c2 x 25 k > c1 x r1. ordering information device package shipping ? ncs2211dg soic ? 8 (pb ? free) 98 units / rail ncs2211dr2g soic ? 8 (pb ? free) 2500 / tape & reel NCS2211MNTXG dfn ? 8 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ncs2211 http://onsemi.com 10 package dimensions ??? ??? ??? case 506bj ? 01 issue o soldermask defined pin 1 reference a b c 0.10 2x 2x top view d e c 0.10 notes: 1. dimensions and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.30 mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. e2 bottom view b 0.10 8x l 14 0.05 c ab c d2 e k 85 8x 8x (a3) c c 0.05 8x c 0.05 side view a1 a seating plane dim min max millimeters a 0.80 1.00 a1 0.00 0.05 a3 0.20 ref b 0.18 0.30 d 3.00 bsc d2 1.64 1.84 e 3.00 bsc e2 1.35 1.55 e 0.50 bsc k 0.20 ??? l 0.30 0.50 note 3 l detail a optional construction l1 detail a 0.00 0.03 note 4 detail b 3.30 8x dimension: millimeters 0.63 1.55 1.85 0.50 pitch 8x 0.35 mounting footprint detail a
ncs2211 http://onsemi.com 11 package dimensions soic ? 8 d suffix case 751 ? 07 issue ah seating plane 1 4 5 8 n j x 45 k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. 6. 751 ? 01 thru 751 ? 06 are obsolete. new standard is 751 ? 07. a b s d h c 0.10 (0.004) dim a min max min max inches 4.80 5.00 0.189 0.197 millimeters b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.053 0.069 d 0.33 0.51 0.013 0.020 g 1.27 bsc 0.050 bsc h 0.10 0.25 0.004 0.010 j 0.19 0.25 0.007 0.010 k 0.40 1.27 0.016 0.050 m 0 8 0 8 n 0.25 0.50 0.010 0.020 s 5.80 6.20 0.228 0.244 ? x ? ? y ? g m y m 0.25 (0.010) ? z ? y m 0.25 (0.010) z s x s m 1.52 0.060 7.0 0.275 0.6 0.024 1.270 0.050 4.0 0.155 mm inches scale 6:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in dif ferent applications and actu al performance may vary over time. all operat- ing parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc d oes not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any cl aim of personal injury or death associ- ated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufact ure of the part. scillc is an equal opportunity/ affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 ncs2211/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative

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